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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZTM1102 PNP transistor/Schottky-diode module
Product specification File under Discrete Semiconductors, SC01 1996 May 09
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
FEATURES * Low output capacitance * Fast switching time * Integrated Schottky protection diode.
handbook, halfpage
PZTM1102
DESCRIPTION Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101.
4
1
APPLICATIONS * High-speed switching for industrial applications.
2 4
PINNING PIN 1 2 3 4 base emitter collector, anode Schottky DESCRIPTION cathode Schottky
Marking code: TM1102.
1 Top view
2
3
MAM237
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PNP transistor VCBO VCES VEBO IC VR IF IF(AV) P Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector - - - - - - - up to Tamb = 25 C; note 1 reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj Notes 1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W. 2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only. total power dissipation operating ambient temperature storage temperature junction temperature up to Tamb = 25 C; note 2 - -55 -55 - 1.2 +150 +150 150 W C C C - - - -40 -40 -6 -200 V V V mA PARAMETER CONDITIONS MIN. MAX. UNIT
Schottky barrier diode continuous reverse voltage forward current (DC) average forward current power dissipation junction temperature 40 1 1 0.5 125 150 V A A W C C
1996 May 09
2
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL NPN transistor V(BR)CBO V(BR)CES V(BR)EBO ICES IEBO VCEsat collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter cut-off current open emitter; IC = -10 A; IE = 0; Tamb = -55 to +150 C; note 1 open base; IC = -1 mA; VBE = 0; Tamb = -55 to +150 C; note 1 open collector; IE = -10 A; IC = 0; Tamb = -55 to +150 C; note 1 VCE = -20 V; VBE = 0 -40 -40 -6 - - - - - - - - - - - - - 250 40 70 100 30 60 15 PARAMETER CONDITIONS MIN.
PZTM1102
MAX. - - - 100 50 50 10 -200 -300 -250 -350 -850 -950 -1.0 -1.1 4.5 10 - - - 300 - 500 - 7 23 380 80
UNIT
V V V nA A nA A mV mV mV mV mV mV V V pF pF MHz
VCE = -20 V; VBE = 0; Tamb = -55 to +150 C - VEB = -6 V; IC = 0; Tamb = -55 to +150 C
emitter-base cut-off current VEB = -6 V; IC = 0 collector-emitter saturation voltage note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -3.2 mA Tamb = -55 to +150 C; note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -3.2 mA note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA Tamb = -55 to +150 C; note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE = ie = 0; VCB = -5 V; f = 1 MHz IC = ic = 0; VEB = -0.5 V; f = 1 MHz IC = -10 mA; VCE = -20 V; f = 100 MHz VCE = -1 V; note 1 IC = -0.1 mA IC = -1 mA IC = -10 mA IC = -100 mA
VCEsat
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
VBEsat
base-emitter saturation voltage
Cob Cib fT hFE
output capacitance input capacitance transition frequency DC current gain
hFE
DC current gain
VCE = -1 V; Tamb = -55 to +150 C; note 1 IC = -10 mA IC = -100 mA
SWITCHING TIMES (see Figs 2 and 3) td tr ts tf delay time rise time storage time fall time 3 VCC = 5 V IC = 50 mA Vi = 0 to 5 V 3 13 200 50 ns ns ns ns
1996 May 09
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
SYMBOL
PARAMETER
CONDITIONS - - - - - - - - -
MIN.
MAX.
UNIT
Schottky barrier diode VF forward voltage IF = 100 mA; note 1 IF = 100 mA; Tamb = -55 to +150 C; note 1 IF = 1 A; note 1 IF = 1 A; Tamb = -55 to +150 C; note 1 IR reverse current VR = 40 V; note 1 VR = 40 V; Tj = 125 C; Tamb = -55 to +150 C; note 1 IR reverse current VR = 10 V; note 1 VR = 10 V; Tj = 125 C; Tamb = -55 to +150 C; note 1 Cj Notes 1. Measured under pulsed conditions: tp 300 s; 0.01. 2. Limiting value for Tj = 125 C; Tj = 150 C with reverse current applied is not allowed as this may cause thermal runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 C is only allowed with forward voltage applied. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient (for the transistor) CONDITIONS note 1 VALUE 100 250 UNIT K/W K/W junction capacitance VR = 0 V; f = 1 MHz 330 400 500 560 300 35(2) 40 15(2) 250 mV mV mV mV A mA A mA pF
thermal resistance from junction to ambient (for the Schottky diode) note 1
1996 May 09
4
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
GRAPHICAL DATA
PZTM1102
handbook, halfpage handbook, halfpage
5V
VCC = 5 V DC 5.23 (1%) DUT Vo (pin 4) 90 (1%)
MBH222
INPUT Vi tp Vo 90% 10% 0V
7.5 k (5%) 5V 0V Vi
825 (1%)
OUTPUT 10% td tr ton ts toff 90% tf
MBH223
tr < 5 ns (10% to 90%); tp = 1 s; = 0.02; Zi = 50 . ton = td + tr; toff = ts + tf.
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
1996 May 09
5
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PACKAGE OUTLINE
PZTM1102
handbook, full pagewidth
0.95 0.85
S 0.32 0.24
seating plane 6.7 6.3 3.1 2.9
0.1 S
B 4
0.2 M A
A
0.10 0.01
3.7 3.3
o
7.3 6.7
16 o max
16
1 1.80 max 10 max
o
2 2.3 4.6 0.80 0.60
3 0.1 M B (4x)
MSA035 - 1
Dimensions in mm.
Fig.4 SOT223.
1996 May 09
6
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
PZTM1102
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 May 09
7

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